Samsung has announced the development of 4Gb (gigabit) memory modules, double the size of its previous chips announced just five months ago.
The modules are aimed primarily at green' servers and are designed to reduce electricity bills and overall maintenance costs. This is due to the reduced need for heat removal by increasing the memory footprint in a given amount of space.
The increase in capacity is down to the use of a 50 nanometre manufacturing process, which also allows reduced memory draw. The 4Gb modules operate at only 1.35 volts, compared to 1.5 volts for the 2Gb modules, making it 20 per cent more efficient. Top speed for the DDR3 memory modules is 1,600MHz.
The 4Gb modules can be packaged as 16GB registered dual in-line memory modules (RDIMM) for servers and in this configuration Samsung said the new modules consume 40 per cent less power than the previous generation.
Samsung also said that the 16GB modules could be effectively glued together to create monster 32GB modules for servers. We can also expect to see 8GB DIMM for use in PC workstations, desktops and laptops.
"We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities," said Kevin Lee, vice president of technical marketing for Samsung. "By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market," he added.
Intel's Core i7 architecture makes use of DDR3 and AMD is rumoured to be releasing a DDR3 update of its Phenom II desktop chips in the near future.
The worldwide DDR3 DRAM market will account for 29 per cent of the total DRAM market in 2009 and 75 per cent in 2011, according to analyst IDC.
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